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| TPT5609 TPT5609 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92L 1. EMITTER 2. COLLECTOR 1 W (Tamb=25) 3. BASE Collector current ICM: 1 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=10A, IE=0 Ic=1mA, IB=0 IE=10A, IC=0 VCB=20V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA IC=800mA, IB=80mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, IE=0, f=1MHz 25 20 5 1 1 60 240 0.5 1 190 22 A A V V MHz pF fT Cob CLASSIFICATION OF hFE Rank Range A 60-120 B 85-170 C 120-240 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com |
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